摘要
采用射频磁控溅射技术和热退火处理制备了纳米Si镶嵌Si O2薄膜,在室温下观察到光致发光现象,峰值分别位于360,430和835nm,结合吸收谱、光致发光激发谱和X射线衍射分析讨论了发光机理.利用纳米Si镶嵌Si O2薄膜的非线性光学特性可作为可饱和吸收体,在Nd∶YAG激光器中实现被动调Q运转.
nc-Si-SiO2 films are prepared by RF magnetron sputtering technique and thermal annealing. The photoluminescence （PL） spectra at room temperature have 3 luminescent band peaks at 360,430, and 835nm,respectively. The PL mechanism is discussed in combination with absorption measurement, PL excitation,and X-ray diffraction. Passive Q-switched operation of Nd ： YAG lasers is demonstrated with a nc-Si-SiO2 film as a saturable absorber.
基金
国家自然科学基金重点资助项目(批准号:60336010)~~
关键词
磁控溅射
纳米SI
光致发光
被动调Q
magnetron sputtering
nanocrystalline silicon
photoluminescence
passive Q-switching
