摘要
采用ADI与高阶紧致差分相结合的方法计算薄膜SOI RESURF结构击穿电压.数值计算表明,这种方法可以降低方程的迭代次数约40%,并明显减少方程的求解时间.
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOl RESURF structure. Numerical results present that this method can decrease the number of iterative by 40% and reduce the computation time greatly.
基金
电子元件器件可靠性物理及其应用技术重点实验室基金资助项目(批准号:51433020105DZ6801)~~
