CMOS工艺兼容的单片集成湿度传感器

Research on CMOS Compatible Integrated Humidity Sensors

设计并制备了一个CMOS工艺兼容的集成湿度传感器，将湿度传感器与CMOS测量电路集成在同一芯片上．片上集成的湿度传感器为叉指电容式，感湿介质为聚酰亚胺，本文给出了相应的感湿模型-针对湿度传感器在全量程电容变化量较小的特点，本文采用开关电容电路作为片上微电容测量电路，讨论了电路的原理并给出了模拟结果．芯片采用3μm多晶硅栅标准CMOS工艺进行流水．测量结果表明，片上集成湿度传感器在5～35℃有较好的直流输出特性，并且长时间稳定性良好．

A CMOS compatible integrated humidity sensor is designed and fabricated. The humidity sensor and CMOS circuits are fabricated at the same chip. The humidity sensor employs an interdigital finger structure and a polyimide sensing material. A humidity sensing model is given. Because of minor capacitance variation during the full range,switched-capacitor techniques are employed in measurement circuits. The principle of the circuits is discussed ,and simulation results are presented accordingly. The design,implemented in a 3μm polysilicon-gate CMOS,results in a good DC output at 5-35℃ and a long time stability.