室温全电可操作的InAs/GaAs量子点存储器

Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots

报道基于高电子迁移率晶体管(HEMT)结构的InAs/GaAs量子点存储器,它既可以在室温下工作,又可以完全由栅极电压来控制其存储状态.在室温下通过对InAs/GaAs量子点存储器的延滞回线、偏压降温C-V等特性的实时测试,证明了其存储机理是由量子点层的深能级引起的,而并非是由量子点本征能级的充、放电所造成的.

Memory devices fabricated in high-electron-mobility transistors with embedded lnAs quantum dots （QDs） can be fully controlled by gate bias at room temperature. The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements.