0.13μm射频MOS场效应晶体管特性及模拟

Characterization and Modeling for 0.13μm RF MOSFETs

采用0.13μm CMOS射频和混合信号工艺进行了射频nMOS场效应晶体管版图的优化设计和芯片制作.对制作的射频nMOS器件进行了直流特性和S参数测试,测试结果表明射频nMOS管的特征频率fT达到了93GHz,fmax超过了90GHz.采用小信号等效电路模型对该nMOS管的交流特性进行了模拟.在100MHz到30GHz频率范围内得到了与测试结果相吻合的仿真结果.

RF nMOS transistors with optimized layouts are successfully fabricated in a 0. 139μm CMOS RF/MS technology. DC characteristic and S-parameter measurements are performed. The measured results show that the cut-off frequency and the maximum oscillation frequency of the RF nMOS reach beyond 93 and 90GHz, respectively. Small-signal modeling is carried out for these RF MOSFETs using a small-signal equivalent circuit model. The simulation results fit well with the measurement results in frequency range from 100MHz to 30GHz.