基于非晶软磁层的巨磁电阻单元性能研究

Characteristics of the element with giant magneto-resistance based on the amorphous film

采用剥离工艺制备了单元大小为10μm×18μm的CoNbZr/Co/Cu/Co和N iFe/Co/Cu/Co多层膜结构的3×3自旋阀单元阵列,并测试了自旋阀单元的静态和动态巨磁电阻特性。结果表明CoNbZr层对快速磁场变化具有良好的线性响应特性。与N iFe/Co/Cu/Co自旋阀单元相比,微米尺度的CoNbZr/Co/Cu/Co自旋阀单元具有更良好的自旋电子特性,可以应用到包括MRAM器件在内的自旋电子器件中。

The spin valve structure magnetic multilayer arrays of CoNbZr/Co/Cu/Co and NiFe/Co/Cu/ Co were fabricated by lift - off technology. The static GMR and dynamics GMR behaviors were measured. The results show that CoNbZr layer has good linear response to the rapid changes of magnetic field. The CoNbZr/Co/Cu/Co spin valve element shows good GMR characteristics compared with the NiFe/Co/Cu/ Co spin valve element. The CoNbZr/Co/Cu/Co spin - valve element can be applied to spin - electronic devices including magnetic random access memory.