基于BSIM3V3的部分耗尽SOIMOSFET解析模型(英文)

Analytical model of partially depleted SOI MOSFET based on BSIM3V3

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摘要提出了部分耗尽SOIMOSFET物理模型,SOIMOSFET可以看作体硅MOSFET和双极晶体管的结合,模型通过详细地分析SOI器件在各工作区域的工作机理得出,并提取出了相应的模型参数。用本模型得出的模拟数据与器件模拟数据进行了对比,取得了很好的一致性。 A physical model of partially depleted SOI MOSFET was proposed. The SOI MOSFET can be regarded as the combination of bulk silicon MOSFET and bipolar transistor. The model is obtained through detailed analysis of operation mechanism of SOI devices. The model parameters are extracted. The data obtained from this analytical model are compared with device simulation. Excellent agreement is obtained.

作者李瑞贞韩郑生

机构地区中国科学院微电子研究所

出处《功能材料与器件学报》 EI CAS CSCD 北大核心 2006年第1期67-70,共4页 Journal of Functional Materials and Devices

关键词 SOI MOSFET 物理模型参数提取 SOI MOSFET physical model parameters extraction

分类号 TN386.1 [电子电信—物理电子学]

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基于BSIM3V3的部分耗尽SOIMOSFET解析模型(英文)

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