摘要
Diamond-like carbon (DLC) films have been deposited using three different techniques: (a) electron cyclotron resonance——plasma source ion implantation, (b) low-pressure dielectric barrier discharge, (c) filtered——pulsed cathodic arc discharge, The surface and mechanical properties of these films are compared using atomic force microscopebased tests. The experimental results show that hydrogenated DLC films are covered with soft surface layers enriched with hydrogen and sp^3 hybridized carbon while the soft surface layers of tetrahedral amorphous carbon (ta-C) films have graphite-like structure, The formation of soft surface layers can be associated with the surface diffusion and growth induced by the low-energy deposition process. For typical CVD methods, the atomic hydrogen in the plasmas can contribute to the formation of hydrogen and sp^3 hybridized carbon enriched surface layers, The high-energy ion implantation causes the rearrangement of atoms beneath the surface layer and leads to an increase in film density. The ta-C films can be deposited using the medium energy carbon ions in the highly-ionized plasma.
Diamond-like carbon (DLC) films have been deposited using three different techniques: (a) electron cyclotron resonance——plasma source ion implantation, (b) low-pressure dielectric barrier discharge, (c) filtered——pulsed cathodic arc discharge, The surface and mechanical properties of these films are compared using atomic force microscopebased tests. The experimental results show that hydrogenated DLC films are covered with soft surface layers enriched with hydrogen and sp^3 hybridized carbon while the soft surface layers of tetrahedral amorphous carbon (ta-C) films have graphite-like structure, The formation of soft surface layers can be associated with the surface diffusion and growth induced by the low-energy deposition process. For typical CVD methods, the atomic hydrogen in the plasmas can contribute to the formation of hydrogen and sp^3 hybridized carbon enriched surface layers, The high-energy ion implantation causes the rearrangement of atoms beneath the surface layer and leads to an increase in film density. The ta-C films can be deposited using the medium energy carbon ions in the highly-ionized plasma.
基金
Project supported by National Natural Science Foundation of China (Grant No 10405005).