摘要
ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The Ⅰ-Ⅴ curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p-n junction behaviour and ohmic contuct behuviour, respectively. The formation of the p-n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance （lower onset voltage and larger emission current） is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interracial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.
ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The Ⅰ-Ⅴ curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p-n junction behaviour and ohmic contuct behuviour, respectively. The formation of the p-n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance （lower onset voltage and larger emission current） is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interracial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.
