碲镉汞外延晶膜的不稳定性

INSTABILITY OF MCT EPITAXY FILM

通过在不同日期、相同测试条件下霍尔测试同一Ｈｇ１－ｘＣｄｘＴｅ／ＣｄＺｎＴｅ外延晶膜的电学参数，发现其电学参数随时间的不同而不同。根据Ｐｅｔｒｉｔｚｌ［１］的双层模型用计算机进行曲线模拟可知，此晶膜正由半导体（原给组份Ｘ≈０．２１３）向半金属转变。这一点已被扫描电镜所证实。

Having been Hall-measured in the same measurement condition at different date, a Hg1-xCdxTe / CdZnTe epitaxy film's electric properties were found to differfrom date to date. After the simudation of these curves by computer as Petritz's' Double-layer Model' [1], it was known that the film was gradually turning fromsemiconductor (orignally given composition x ≈ 0.213) into semimetal. This view has beenconfirmed by Scan Electronic Mirror(SEM).