调制增益导引GaAs／GaAIAs锁相激光器阵列的模式特性分析

TAILORED GAIN GaAs/GaAlAs PHASE-LOCKED LASER ARRAYS

首次利用液相外延（ＬＰＥ）、标准先刻工艺，两次质子轰击方法，研究和制作了调制增益导引ＣａＡＳ／ＧａＡｌＡｓ锁相激光器阵列．它是由六个激光器陈列元组成，调制增益是通过线性地改变激光器条宽从３μｍ变化到８μｍ，其间距保持常数为５μｍ实现的。观察到了远场单瓣，ＦωＨＰ是１．９°，接近于衍射极限；输出光功率为３００ｍωｆａｃｅｔ（ｃω）；其模式特性为：在１．２Ｉｔｈ＜Ｉ＿（ｉｃ）－＜１．８Ｉｔｈ时为单纵模，否则为多纵模。

Tailored Gain GaAs/GaAlAs phase-lacked Laser arrays have been fabricated by using the LPE technique the standard photolithotraphic technique,two bines proton bombardment.They are male by varying the width of the channels of the lasers while keeping the spacing between them constant.The array consists of six lasers.We obtain single lobe far-field pattern with full width at half maximum (FWHM) of 1.9°,its optical output power per facet is 300mω (CW) when 1.2Ith<Iin < 1.8Ith its mode is single-mode.Otherwise itS mode is more modes.