SnO_2：Pd／Si新气敏特性的研究

Study of the New Gas-sensibility of SnO_2: Pd/Si to Reducing Gases

用ＣＶＤ法在（１１１）和（１００）单晶硅衬底上沉积ＳｎＯ２或ＳｎＯ队：Ｐｄ薄膜．在不同温度下，测量ＳｎＯ２／Ｓｉ表面吸附Ｈ２或ＣＯ等还原性气体后光电压的变化．结果表明：ＳｎＯ２：Ｐｄ／Ｓｉ的光电压变化，可以灵敏检测Ｈ２、ＣＯ等气体，讨论了ＳｎＯ２：Ｐｄ／Ｓｉ的气敏机理．

SnO2 and SnO2: Pd films are deposited by CVD method on substrate of (111 ) oriented and (100) N-type silicon. The changes of photovoltage are measured before and after H2 or CO adsorption at different temperatures. The experimental results show that the reducing gases;such as H2 or CO; can be sensibly detected through the variation of photovoltage.The new gas-sensibility mechanism of SnO2: Pd/Si is discussed.