摘要
研究了低温砷化镓的外延lift-off和基于范德华力在石英新衬底上贴附的实验方法：腐蚀掉100nm厚的AlAs牺牲层，将外延生长的500nm厚的低温砷化镓（LT-GaAs）从生长衬底上揭下（lift-off），借助于范德华力将LT-GaAs外延膜贴附在新衬底上。Lift—off之前在LT-GaAs表面上滴附黑蜡，以增强在lift-off过程中对LT-GaAs的保护，和加快反应气体扩散离开反应区的过程。针对500nm厚的LT-GaAs外延薄膜的揭起和贴附，给出了低温砷化镓的最佳lift-off尺寸和提高范德华力贴附质量的实验技术。此外还给出了利用所得到的lift-off后的LT-GaAs制备的共平面条形结构光导开关的时间特性：上升时间小于1．5ps，FWHM小于2ps。
The experimental methods on epixial lift-off of 500-nm-thick low-temperature molecular beam epitaxy （MBE） grown Gags （LT-GaAs） epilayers from the substrate on which they were grown, by means of etching out 100-nm-thick AlAs release layer, as well as their Van der Waals bonding on new substrates were studied. Melted black wax was used to the surface of the LT-GaAs in order to protect epilayers during the lift-off, which was also helpful for the outdiffusion of dis- solved gas from the etching zone. Proper lift-off dimensions of LT-GaAs for a thickness of 500 nm are given. Experimental techniques are discussed to improve the quality of Van der Waals bonding. Temporal characteristics of photoconductive switches using the epitaxial lift-off LT-GaAs with a structure of coplanar strip transmission line are also given with a rise time less than 1.5 ps, and a full width at half maximum （FWHM） of less than 2ps.
出处
《高技术通讯》
CAS
CSCD
北大核心
2006年第2期163-166,共4页
Chinese High Technology Letters
基金
德国学术交流中心DAAD和教育部留学回国人员科研启动资金资助项目
致谢：本文作者感谢德国学术交流中心（DAAD）提供的经费支持和交流机会及德国亚琛工业大学电子工程系半导体电子研究所提供的良好的实验奈件.本论文得到教育部留学回国人员科研启动资金的支持.
