期刊文献+

ZnTe薄膜性能研究 被引量:1

Study on the Properties of ZnTe Film
下载PDF
导出
摘要 用真空共蒸发法在室温下制备了ZnTe:Cu多晶薄膜。用XRD表征薄膜结构,刚沉积未掺Cu和适度掺Cu的薄膜为立方结构,高度(111)择优,重掺Cu的为立方和六方混合相。室温时薄膜的形貌和光能隙取决于掺Cu浓度和退火温度,并通过透射光谱的测量计算出光能隙。 ZnTe: Cu films were deposited by vacuum co-evaporation technique at room temperature. It shows that as-deposited and un-doped or properly Cu-doped ZnTe films are of cubic structure and highly preferential orientation of ( 111 ) while heavily Cu-doped ZnTe films of the mixture of cubic and hexagonal structure by XRD measurements. Morphology and optical energy gaps at morn temperature depend on Cu concentration in ZnTe and annealing temperatures. And optical energy gaps are calculated from the transmittance measurements.
出处 《激光与红外》 CAS CSCD 北大核心 2006年第2期135-137,共3页 Laser & Infrared
基金 国家自然科学基金资助项目(50076030) 河北省教 育厅自然基金资助项目(2004402)。
关键词 ZnTe:Cu薄膜 共蒸发法 退火 ZnTe: Cu films co-evaporation technique anneal
  • 相关文献

参考文献5

  • 1P V Meyers.Polycrystalline Cadmium Telluride n-i-p Solar Cell[Z].Final Report to SERL under Subcontract No.ZL-7-06031-2 for the Period of 6/1/87-8/31/88.
  • 2R G Bohn,C N Tabory,C Deak,et al.RF Sputtered Films of Cu-Doped and N-Doped ZnTe[A].IEEE First World Conf.Photovoltaic Energy Conversion[C].1994,354.
  • 3T A Gessert,Mason A R,Reedy R C,et al.Development of rf sputtered,Cu-doped ZnTe for use as a contact interface layer to p-CdTe[J].Journal of Electronic Materials,1995,24(10):1443-1449.
  • 4郑家贵,张静全,蔡伟,黎兵,蔡亚平,冯良桓.ZnTe Cu薄膜的制备及其性能[J].Journal of Semiconductors,2001,22(2):171-176. 被引量:27
  • 5T Mahalingam,V S John,S Rajendran,et al.Annealing studies of electrodeposited zinc telluride thin films[J].Surface and Coatings Technology,2002,155:245-249.

二级参考文献4

  • 1Tang J,IEEE Conf Rec 26th IEEE PVSC Proc,1997年,439—442页
  • 2Feng L,J Electron Mater,1996年,25卷,9期,1422—1427页
  • 3Feng Lianghuan,四川大学学报,1996年,93—97页
  • 4Gessert T A,J Vac Sci Technol,1994年,A12卷,4期,1501—1506页

共引文献26

同被引文献4

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部