改造国产ICP进行低温刻蚀

Low Temperature Etching in Improved P-2BICP

低温刻蚀被用来进行硅微深孔加工。文中介绍了感应耦合等离子体(ICP)刻蚀原理,通过对国产ICP进行改造,在SF6/O2气体条件下进行低温刻蚀,利用低温钝化机理控制工艺,减少器件损伤。

A cryogenic SF6/O2 plasma process has been used to investigate the etching of deep holes in silicon wafers. The etching principle of inductive couple plasmas was introduced in this paper. Passivation mechanisms of Si trenches involved in SF6/O2 cryogenic plasma etching were introduced simply in order to better control the process and avoid defects.