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新型微波有源混频放大MMIC设计 被引量:2

Design of New Active Microwave Mixer and Amplification Integrated Circuit(MMIC)
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摘要 采用0.25μm GaAs PHEMT工艺实现了单片S波段(2.6GHz^3.6GHz)有源混频放大器。电路采用改进的差分对本振和共栅射频混频形式,具有较大的变频增益和高的隔离度,同时将补偿放大器与变频器结合在一起,提高了单元电路的集成度。本文着重介绍了建模分析和应用ADS软件进行仿真优化。测试结果:输入LO和RF,LO和IF的隔离度都大于50dB,变频增益大于12 dB。 A monolithic S-band (2.6GHz ~ 3, 6GHz)mixer and amplifier module has been developed by adopting the 0. 25μm GaAs PHEMT technology. Applied to this circuit improved differential local oscillation and mutual grid RF mixer, hereby achieving a higher conversion gain and isolation. Furthermore combination of the amplifier and mixer, enhances the integration of elementary circuits. This paper emphasizes the model analysis and the simulation and optimization practiced through applying the ADS software. It is proven from the experimental results that both isolation between the RF part with the LO and hetween the LO with the IF part are higher than 50 dB, and the frequency conversion is higher than 12 dB.
作者 李佩 陈兴国
出处 《微波学报》 CSCD 北大核心 2006年第1期27-30,共4页 Journal of Microwaves
关键词 GAAS PHEMT工艺 单片有源混频放大器 ADS软件 变频增益 隔离度 GaAs PHEMT technology, Active mixer and amplifier, ADS software, Frequency conversation, Insulation
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参考文献2

  • 1Ravender Goyal.Monolithic Microwave Integrated Circuits.USA:Artech House Inc,1989.
  • 2Maesel M,Ou Weiming,Paneli J,et al.A double blance 6 ~ 18GHz GaAs mmic mixer.IEEE,GaAs IC Symposium,1991.

同被引文献9

  • 1王维波,张斌.C波段pHEMT单片Gilbert混频器[J].固体电子学研究与进展,2007,27(2):194-198. 被引量:1
  • 2李鸣,唐守龙,罗岚,黄成,时龙兴.高线性度上变频混频器设计[J].电子器件,2004,27(4):603-606. 被引量:3
  • 3王维波,张斌.5.2~5.8GHz有源巴仑MMIC[J].固体电子学研究与进展,2006,26(1):29-33. 被引量:2
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  • 6Lin Jenshan,Zelley Christopher,Lubecke OlgaBoric,et al.A silicon MMIC active balun/buffer amplifier with high linearity and low residual phase noise[C].IEEE MTT-S Digest,2000.
  • 7Yu C,Yuan J S.Linearity and power optimization of a microwave CMOS Gilbert cell mixer[C].IEEE Proc.Electron Devices for Microwave and Optoelectronic Applications,2003:234-239.
  • 8Li Q and Yuan J S.linearity Analysis and Design Optimization for 0.18μm CMOS RF mixer[C].IEEE Proc.Circuits,Devices,and Systems,April 2002,149:112-118.
  • 9Tom K.Johansen,Jens Vidkjer,and Viktor Krozer.Analysis and Design of Wide-Band SiGe HBT Active Mixers[J].IEEE Trans.Microw.Theory Tech.,June 2005,53:2389-2397.

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