基本FFET的试制和性能研究

On the Preparation and Properties of the Basic Ferroelectric Field Effect Transistor

论述了铁电场效应晶体管（ＦＦＥＴ）的基本工作原理，给出了其设计方案．采用ＳＯＬ－ＧＥＬ法制备了基本的ＭＦＳ－ＦＥＴ和ＭＦＯＳ－ＦＥＴ，对其电性能进行了测试分析．测试结果表明：ＭＦＯＳ结构的ＦＦＥＴ具有极化存储特性．

he working principle of the ferroelectric field effect transistor (FFET) is described with the design scheme given. FETs with M/F/S and M/F/O/S structures are prepared with the SOLGEL technique.The electrical properties are tested by C-V and I-V measurement. Measurement results show that the switching behavior of FFETs with M/F/O/S heterostructure exhibit a feature of the polarization-induced memory.