SIPOS／Si结构的界面特性

A Study on the Interface Properties of SIPOS/Si Structures

采用红外吸收光谱分析了ＳＩＰＯＳ薄膜中Ｓｉ—Ｏ键的结构，对比了热退火、快速灯光退火对ＳＩＰＯＳ中Ｓｉ—Ｏ键结构的影响，并结合ＳＩＰＯＳ／Ｓｉ结构的Ｃ－Ｖ，Ｉ－Ｖ测试结果，对其界面特性进行了分析．

fter SIPOS films have been prepared, they can be annealed either with direct heat or with flashlight. Based on the infrared absorption spectra of SIPOS films, the properties of Si-O bonding in the films by different modes of annealing are analyzed. In order to examine the interface properties of the SIPOS/Si structures, the C-V and I-V characteristics of the structures are measured. It can be seen that both annealing methods can improve the interface properties and the structure behaves more like a heterojunction.