Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

Optimal parameters for depositing Titanium nitride （TIN） thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si （100） substrates by DC reactive magnetron sputtering, at different temperatures, different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction （XRD）; surface morphology of the thin films was characterized using an atomic force microscope （AFM）. The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500℃, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred （200） orientation, resistance is small enough for its use as bottom electrodes.

Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures, different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 °C, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.