期刊文献+

一维硅纳米材料的光学特性 被引量:3

Optical Properties of One-dimensional Silicon Nanomaterials
下载PDF
导出
摘要 硅纳米线与硅纳米管是两种重要的一维硅纳米材料,由于具有量子限制效应等性能在光电子器件方面具有潜在的应用前景。总结了近年来硅纳米线在光学特性方面的研究进展,重点介绍了本征硅纳米线、掺杂硅纳米线及硅纳米线阵列的光致发光光谱(PL)的最新进展情况,同时涉及了硅纳米管在PL发射光谱方面的研究结果。 Silicon nanowires and silicon nanotubes are two kinds of important one-dimensional silicon nanomaterials exhibiting a potential application prospect in the optoelectronic field owing to the quantum confinement effect. The recent studies on the optical properties of silicon nanowires mainly including the photoluminescence (PL) spectra of intrinsic~ nanowires, doped silicon nanowires and silicon nanowires array are reviewed in detail in this paper. In addition, the research development of silicon nanotubes (SiNTs) on PL spectra and the development direction are also introduced and discussed.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2006年第1期36-40,共5页 Journal of Synthetic Crystals
基金 教育部博士点基金资助项目(No.20040532014)
关键词 奎纳米线 硅纳米管 光学特性 光致发光特性 silicon nanowires silicon nanotubes optical properties photoluminescence
  • 相关文献

参考文献23

  • 1俞大鹏.纳米硅量子线的发现与研究[J].物理,1998,27(4):193-195. 被引量:4
  • 2Yu J Y,Chung S W,Heath J R.Silicon Nanowire:Preparation,Device Fabrication,and Transport Properties[J].J.Phys.Chem B.,2000,104:11864-11870.
  • 3Canham L T.Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers[J].Appl.Phys.Lett.,1990,57:1046-1048.
  • 4Takagi H,Ogawa H,Yamazaki Y,et al.Quantum Size Effects on Photoluminescence in Ultrafine Particles[J].Appl.Phys.Lett.,1990,56:2379-2380.
  • 5Zhang Y F,Tang Y H,Peng H P,et al.Diameter Modification of Silicon Nanowires by Ambient Gas[J].Appl.Phys.Lett.,1999,75(13):1842-1844.
  • 6Holmes J D,Johnston K P,Doty R C,et al.Control of Thickness and Orientation of Solution-grown Silicon Nanowires[J].Science,2000,287(5):1471-1473.
  • 7Qi J F,White J M,Belcher A M,et al.Optical Spectroscopy of Silicon Nanowires[J].Chem.Phys.Lett.,2003,372:763-766.
  • 8Bai Z G,Yu D P,Wang J J,et al.Synthesis and Photoluminescence Properties of Semiconductor Nanowires[J].Mater.Sci.Eng.B,2000,72:117-120.
  • 9Yu D P,Lee C S,Bello I,et al.Synthesis of Nano-scale Silicon Wires by Excimer Laser Ablation at High Temperature[J].Solid State Commun.,1998,105(6):403-407.
  • 10李梦轲,陆梅,王成伟,力虎林.取向碳纳米管/硅纳米线复合阵列的制备[J].中国科学(B辑),2002,32(3):204-209. 被引量:14

二级参考文献39

  • 1Zhou G W,Appl Phys Lett,1997年
  • 2俞大鹏,Appl Phys Lett,1997年
  • 3俞大鹏,Solid State Commun,1997年
  • 4Tilke A, Blick R H, Lorenz H, et al. Single- electron in highly doped silicon nanowires in a dual- gate configuration [J]. J Appl Phys, 2001, 89(12):8159- 8162.
  • 5Muller D A. The electronic structure at the atomic scale of ultrathin gate oxides[J]. Nature, 1999, 399:758- 761.
  • 6Schulz M. The end of the road for silicon[J]. Nature, 1999, 399:729- 731.
  • 7Morales A M, Lieber C M. A laser ablation method for the synthesis of crystalline semiconductor nanowires[J]. Science, 1998, 279:208- 211.
  • 8Tang Y H, Zhang Y F, Lee C S, et al. Large scale synthesis of silicon nanowires by laser ablation[J]. Mater Res Soc Symp Proc, 1998, 526:73- 77.
  • 9Zhang Y F, Tang Y H, Wang N, et al. Silicon nanowires prepared by laser ablation at high temperature[J]. Appl Phys Lett, 1998, 72(15):1835- 1837.
  • 10Kamins T I, Stanley Williams R, Chang Y L, et al. Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si[J]. Appl Phys Lett, 2000, 76(5):562- 564.

共引文献34

同被引文献41

引证文献3

二级引证文献20

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部