AgGa_(1-x)In_xSe_2单晶的生长研究

Study on Growth of AgGa_(1-x)In_xSe_2 Single Crystal

采用高纯（99．9999％）Ag、Ga、In和Se单质为原料，按化学计量比富Se0．3-0．5％配料，通过机械振荡和温度振荡相结合的方法合成出单相高致密AgGa1-xInxSe2多晶材料。以此为原料采用布里奇曼法生长出外观完整的尺寸为φ15mm×25mm的AgGa1-xInxSe：单晶锭（x=0．2）。沿自然显露面对晶体进行了解理和x射线衍射分析，发现该面是（101）面。同时进行了红外透过率测试，其红外透过率为41％。

Using high pure elements of silver, gallium, indium and selenium as the raw material a singlephase AgGa1-xInxSe2 polycrystal with high mass density was prepared by mechanical and temperature oscillation method. An integral AgGa1-xInxSe2 single crystal with diameter of 15mm and the length of 25ram has been grown from the pre-synthesized polycrystal by Bridgman method. Study on cleavage along the spontaneous face was carried out. It is proved that the spontaneous face is （ 101 ） face by using X-ray diffraction. The IR transmission spectrum of the AgGa1-xInxSe2 single crystal was obtained and the infrared transmission is 41%.