铝表面SiO_X薄膜结合性能与机理研究

Bending test and bonding mechanism analysis of the SiO_X film on aluminum substrate

应用化学气相沉积(CVD)方法在铝表面形成SiOX陶瓷涂层,通过弯曲实验研究了涂层与基体的结合性能。利用扫描电子显微镜(SEM)观察了弯曲部位的表面形貌,弯曲过程表述为表面凹坑与内部孔洞联合长大,形成长条裂纹状沟槽或突脊,最后裂纹长大直至断裂。研究表明,基底与膜层结合良好,形成高结合力的原因是铝基底与表面SiO膜层间过渡层中的AlO与SiO键合能很高,键合稳定。

A kind of SiO_X film was deposited on aluminum substrate by ambient pressure chemical vapor deposition. The bonding properties were studied by 90 and 180 degrees multi-bending tests. The morphology of the bended surface by scanning electrical microscopy shows that the film is bonded well to the substrate. The fracture process is described as follows: the surface pits and inner vacancies grow and link up to a lot of grooves or ridges,causing breaking down. The results show that there is transition layer in which the bonding energy of Al-O and Si-O is high enough to binding the substrate and surface showing an excellent bonding strength.