摘要
测量了1.3μm InGaAsP/InP DC-PBH 激光器在直流工作条件下,阀值电流密度随温度的变化。应用电子从四元有源区泄漏入 InP 限制层的机理讨论了实验结果。
Measurements are made on the temperature dependence of threshold current density in DC-PBH 1.3μm InGaAsP/InP laser under direct current.The experimental results are discussed in terms of mechanism of electron leakage from the quatemary active region into the InP confining lay.
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第2期156-161,共6页
Semiconductor Optoelectronics