以Si为衬底GaAs异质外延工艺及其在半导体激光器中应用的研究进展

Research and Development of Heteroepitaxial Technology of GaAs on Si Substrates and Its Applications in Semiconductor Lasers

本文较系统地评述了 MOCVD 或 MBE 实现以 Si 为衬底 GaAs 异质外延工艺,及其在半导体激光器中应用的研究进展。叙述了以 Si 为衬底异质外延的工艺关键,使用 GaAs/Si 材料制备激光器的发展水平,降低外延层中位错密度和应力可能的方法。最后,介绍了该技术及其用于制备高性能激光器的发展动向。

This paper reviews systematically the recent research and develop- ment of heteroepitaxial technology of GaAs on Si substrates obtained by molecular beam epitaxy(MBE)or metalorganic chemical vapor deposition(MOCVD)and its applications in semiconductor lasers.The key technologies in heteroepitaxial growth of GaAs on Si and the recent developing level of lasers fabricated on GaAs/Si substra- tes are described emphatically.In this article,various possible methods reducing the dislocation density and strain in heteroepitaxial layers are discussed.Finally,the trend for fabricating high performance lasers is prospected.