非外延硅单晶高灵敏度光敏三极管的研制

Research and Development of High Sensitivity Phototransistor Made from Non-Epitaxial Si Single Crystal

本文研究用非外延硅单晶制造高灵敏度光敏三极管的方法。首先论述了两个困难:光开通现象和光电特性的非线性现象,然后查明了引起这两种现象的原因,并提出了对策,从而制得了3DU84型高灵敏度光敏三极管;其光电流在100勒克司光照下高达14毫安,在1000勒克司光照下高达60毫安。作为产品,3DU84与PN101/102相当,在100勒克司光照下,光电流最小值为1.5毫安,典型值为2～10毫安。

This paper deals with manufacturing technique for hjgh sensitivity phototransistor made from non-epitaxial Si single crystal.Two problems are presen- ted in the first place,i.e,the phenomena of optical turnon and optoelectric non- linearity.Consequently,the way to deal with these problems is proposed on the basis of examination into the causes of such phenomena.As a result,model 3DU84 high sensitivity phototansistors have been manufactured whose light current is up to 14 mA at 100 Lx,and up to 60 mA at 1000 Lx.As a prcduct,model 3DU84 is equivalent to model PN 101/102:the min.value of light current will be 1.5 mA at 100 Lx with the typical value of 2～10 mA.