摘要
X-Y MOS 寻址器由两个 MOS 移位寄存器组成,主要用于 MOS 型 CID 图像传感器的寻址读出。本文论述了为32×32InSb CID 器件设计和研制的 X-Y MOS寻址器。
The X-Y MOS addressing device is consisted of two MOS shift re- gisters,used mainly for addressing readout of MOS CID image sensors.The paper discusses such X-Y MOS addressing devices designed and developed for 32×32 ele- ment InSb CIDs
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第3期216-219,共4页
Semiconductor Optoelectronics
