摘要
本文叙述了用于制作 InGaAsP/InP 半导体激光器的非平面液相外延工艺。讨论了各种因素对非平面液相外延生长的影响。在 InP 衬底上和刻有沟槽的 InGa-AsP/InP 外延片上成功地生长出了高质量外延层。用该外延片制作的激光器在室温连续工作条件下典型阈值电流30mA,典型输出功率为10mW。最高激射温度为115℃。
The nonplanar liquid phase epitaxy technology for InGaAsP/InP se- miconductor lasers is described with discussion of the effect of various factors on non- planar liquid phase epitaxial growth.High quality epitaxial layers are successfully grown on InP substrars and/or on grooved InGaAsP/InP epilaxill wafers.The typical threshold current of lasers made from such epitaxial wafers continuouslv operating at room temperature is 30 mA,with typical output power of 10mW and maximum emitting temperature of up to 115℃.
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第4期329-332,共4页
Semiconductor Optoelectronics
