摘要
本文在理论上,用角谱法分析了1.3μm InGaAsP/InP 半导体激光器腔面镀膜后的剩余反射率,并对 TE 波算出了单层近似结果。在实验上,较详细地讨论了 SiO 减反射膜的蒸镀。并通过对1.3μm 激光器前后腔面蒸镀 SiO 减反射膜而制成了超发光二极管。
In this paper,we analyse theoretically the residual reflectivity of 1.3 μm InGaAsP/InP LDs coated cavity surfaces by using the method of angular spec- trum.For TE wave,we have given approxiate calculation results for the single la- yer.Moreover,the evaporation of SiO antireflecrion film is discussed in detail on the experimental basis.a superluminescent diode is fabricated by means of evaporation of SiO antireflection film for 1.3μm LDs cavity Surfaces.
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第4期358-362,共5页
Semiconductor Optoelectronics
