化合物半导体的离子注入隔离技术

Isolating Technique Using Ion Implantation for Compound Semi conductors

本文介绍了Ⅲ-Ⅴ族化合物半导体中有关质子隔离、氧隔离、氦隔离和硼隔离的两种补偿机理。分别讨论了离子剂量、入射能量和退火温度对离子注入所形成的高阻层的电阻率、纵向深度及其光学性能的影响。分析了离子注入器件隔离中的有关工艺问题,并提出解决措施。

This paper presents two compensation mechanisms of H- implanted isolation, O'-implanted isolation, He'-imptanted isolation and B'-implanted isolation in Ⅲ—V compound semiconductors. The effects of the ion dose, incident energy and anneating temperature on the resistivity, vertical depth and opticat properties of the high resistance layer formed by ion implantation are discussed, respectivety. We have also analyzed the technicat probltes, in ion imptanted intterdevice isolation and the methods, to resolve, these prohlems are proposed.