用于砷化镓功率MES FET器件的优质多层汽相外延材料的制备

The Preparation of GaAs VPE Multilayer Material with High Quality for GaAs MESFET Power Device

本文介绍了近年来我们在氯化物汽相外延GaAs材料的新进展,其中包括提高均匀性的研究,采用脉冲掺杂进行变浓度有源层生长的研究,以及带有n^+层的外延材料用于功率GaAs MESFET器件的研究。所生长的优质多层GaAs VPE材料,用于MESFET功率器件获得良好的结果,在15GHz下输出功率≥1W,相关增益≥5dB;18GHz下,输出功率≥600mW,相关增益≥5dB。

This paper presents some recent progress in the research on GaAs VPE material with the chloride system, such as the improvement of uniformity in epitaxial wafer, the growth method of active layer with variable impurity concentration using modulation doping and the application of epitaxial material with n^+-La-yer in GaAs MESFET power devices, The excellent results were obtained, as this material was used to MESFET power device: F_0=15GHz, P_0(-1dB)=1W, G_p=5dB, F_0=18GHz, P_0(-1dB)=600mW, G_p=5～6dB。