摘要
本文简述了硅功率微波单片集成放大器的电路设计、工艺制作和电路性能。该电路工作频率为50～500MHz,1dB压缩点输出功率P_(-1)≥500mW,功率增益G_P=13～15dB,增益平坦度△G_P=±1dB,驻波比1:2。
This paper briefly describes the circuit design, manufacture technology and circuit feature of the silicon power microwavemonolithic integrated amplifier. The operating frequency of this circuit is 50～500MHz, power output at 1dB gain compression P_(-1)≥500mW, power gain G_p=13～15dB, gain flatness △G_p=±1dB and VSWR=1: 2.
出处
《半导体情报》
1990年第2期82-84,98,共4页
Semiconductor Information
