摘要
按照一种新的双栅器件设计理论,采用阶梯栅和两栅间嵌入虚接地点的结构,使GaAs双栅FET获得了优良的噪声和增益性能。二栅在管壳内通过电容射频接地,有助于稳定性的改善。器件最好水平为f_0:12GHz,N_F:2.42dB,G_(?):13.89dB。该器件设计合理,工艺经过优化,使器件具有较高的成品率及优品率。
According to a new design theory of dual-gate FET, the structure of stepped gate and inlaying a virtual ground between the two gates was adopted, therefore the excellent performance of noise and gain has been obtained. It is helpful to improve on stability that the second gate is RF grounded in the package by the capacitor. The best devices exhibit noise figure of 2.42dB and associated gain of 13.89dB at 12GHz. This device possesses high yield and high guality with reasonable design and optimized technology.
出处
《半导体情报》
1990年第2期3-5,17,共4页
Semiconductor Information
