摘要
采用新型通孔结构制作的微波功率GaAs FET,在12GHz,输出功率达1.2W,相应功率增益为6.6dB。在15GHz输出功率为1.1W,相应增益为5.5dB,漏极效率大于30％。
A new via hole structure has been applied to fabricate microwave power GaAs FET. The power output of this device is 1.2 W with 6.6dB associated gain at 12GHz, and 1.1W with 5.5dB associated gain at 15GHz. The drain efficiency is over 30%.
出处
《半导体情报》
1990年第2期12-17,共6页
Semiconductor Information
