摘要
本文通过电路实验向大家介绍了一种8～18GHz微波FET宽带放大器,其中包括放大器设计和器件寄生参量的局限。讨论了电路的可行性并测量了放大器的相关功率增益、平坦度、驻波系数和噪声系数。
A 8～18GHz broad-band microwave FET amplifier, including design of the amplifier and limitation of parasitic parameters of the devices, is presented by means of the experiments on circuits. The feasibility of circuits is discussed, and the associated power gain. flatness, VSWR and noise figure of the amplifier are also measured.
出处
《半导体情报》
1990年第2期31-34,共4页
Semiconductor Information
