摘要
本文研究了MOCVD生长GaAs,Ga_(1-x)Al_xAs的生长工艺及材料特性,生长出用于HBT的Ga_(1-x)Al_xAs/GaAs多层异质结构材料。器件的最大电流放大系数为100,截止频率为2.4GHz。
The process and properties of GaAs and Ga_(1_x)Al_xAs grown by MOCVD have been investigated. The、 multilayer material with heterostructures for HBT has been grown. Current amplification factor β and cut-off frequency of the obtained HBT is about 100 and 2.4GHz, respectively.
出处
《半导体情报》
1990年第2期38-42,共5页
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