化学束外延介绍

An Introduction to Chemical Beam Epitaxy

化学束外廷(Chemical Beam Epitaxy,简称CBE)是一种由分子束外延(MBE)和金属有机物化学汽相淀积(MOCVD)发展而来的新技术,它结合了MBE的束的属性和MOCVD的控制和采用全汽相源的特点,它综合了两者的优点而使各自的缺点得到弥补。最近用化学束外延得到的结果表明CBE具有超过MBE和MOCVD的潜力而成为一种非常重要的新的外延技术。本文主要通过与MBE和MOCVD的对比,对CBE作了简单的介绍。

Chemical Beam Epitaxy (GBE) represents a new offspring from MBE and MOCVD. It combines the beam nature of MBE and the control and use of an all-vapor source as in MOCVD. Recent results with CBE show that CBE holds the potential as an important new epitaxial technique that goes beyond both MBE and MOCVD. A brief introduction to CBE comparing with MBE and MOCVD is presented in this paper.