快速热退火在硅中引入的缺陷的研究

Investigation of Defects in Silicon Introduced by Rapid Thermal Annealing

快速热退火(RTA)将在n型硅中引入深能级缺陷。缺陷的种类和浓度随退火温度的变化而变化。由于这些缺陷的存在,使少数载流子寿命显著降低。这些缺陷可以分成两类。一类是与被冻结在晶格缺陷上的金属杂质有关,经二步退火后,这些缺陷能在650℃附近退火消失。另一类是晶格的本征缺陷,二步退火并不能消除这类缺陷。研究表明,这类缺陷与位错有关。

The deep-level defects are introduced into n-type silicon during Rapid Thermal Annealing.The kinds of the defects and thier concentrations vary with annealing temperature. Theminority carrier lifetime is markedly reduced due to the existence of these defects. There aretwo kinds of defect, one is related to the defect of metal impurity in the crystal lattice whichcan be removed by subsequent annealing at 650℃, the other is related to the intrinsic defectof the crystal, which cannot be eliminnted by subsequent annealing Our results show thatthe latter is associated with dislocation.