激光烧蚀制备纳米Si晶粒尺寸均匀性与靶衬间距的关系

Relation between target-substrate separation and size-uniformity of Si nanoparticles prepared by laser ablation

为了对纳米Si薄膜中晶粒尺寸的分布进行定量研究,首次提出“晶粒尺寸均匀度”的概念,并对Lowndes等人采用脉冲激光烧蚀方法制备纳米Si薄膜的实验结果进行了定量分析。结果表明,随着靶衬间距的增大,晶粒尺寸均匀度先减小后增大,也就是说,存在靶衬间距的最佳值,使所制备的纳米Si晶粒的尺寸均匀性最好。MonteCarlo模拟结果对这一结论进行了解释。

To quantificationaUy study the sized distribution of Si nanoparticles in thin films, ＂uniformity-degree＂ is used to analyze the experimental results on nanocrystalline Si films prepared by pulsed laser ablation authorized by Lowndes. The rcsuits show that while increasing target-substrate separation, ＂uniformity-degree＂of Si nanoparticles decreases. There is an optimization target,substrate separation to induce the most uniform, sized nanoparticles, which is explained by the results of Monte Carlo method.