摘要
本文研究了GaInPAs/InP晶格匹配超晶格材料<110>方向的电子结构,对薄层超晶格和与之具有相同化学组份的混晶的色散关系作了比较。研究了带边状态密度在超晶格每一层的分布情况,计算了GaInPAs/InP晶格匹配超晶格的能隙随厚度、组份的变化趋势。研究结果表明:薄层超晶格与具有相同化学组份的混晶的电子结构基本相同,能隙边状态密度偏重于分布在超晶格的GaInPAs原子层内。
The electronic structure of GaInPAs/InP(110) lattice-matched superlattice is studied. Theband dispersion relation of thin-layer superlattice is compared with that of the alloy with thesame chemical composition.The densities of states at band edges and the energy gap versuscomposition and thickness are analysed.The results show that though the similarity appears inband dispersion relations between thin-layer superla(?)tice and the corresponding alloy with thesame composition,the density of states at band edges distributes particularly in the alloy layersof the superlattice, which reveals a precursor sate of quantum well formation.
关键词
GAINAS/INP
超晶格
材料
电子态
superlattice
electronic states
energy gap
dispersion relation of energy band
