摘要
本文着重研究了Ⅲ—Ⅴ族混晶半导体Ga_(1-x)AlAs Raman谱在不同温度下的多级共振行为。分析了二级及多级声子谱增强及产生的物理原因,从一个新的侧面证实了激子-LO声子复合体作为Raman散射中间态存在的可能性。同时,还从Raman散射张量出发,对近共振条件下TO声子的消失进行了讨论。
This paper has mainly studied the resonant behaviour of multi-order Raman spectra inGa_(1-x)Al_xAs at different temperatures.The physical mechanism about the enhancement of thesecond and the higher order Raman scattering is analysed, and a new evidence for the possibleintermediate state of Raman scattering-an exciton-LO phonon complex is given.Also,the anti-resonant phenomenon of TO-phonon unde(?) near-resonant condition has been discussedby analysing scattering tensors.
