摘要
用光致发光和正电子湮没技术研究了掺Sb InP单晶的“本征缺陷”。发现元素Sb的掺入导致磷空位(V_p)或者是V_p与杂质络合物的光致发光峰消失。用正电子湮没技术的测量也表明掺Sb的InP晶体中单空位浓度有所降低,两种方法测量的结果对应得很好。我们认为InP中掺Sb能有效地降低晶体中的本征缺陷。
The native defect of InP crystals doped with Sb has been studied by means of PL and positronannihilation techniques. It is found that the V_p or V_p-impurity complex is responsible for thedisappearence of the luminescence band at 1.18 eV, Moreover,the lifetime spectra measurementsmanifest a reduction of the vacant type defect for Sb doped crystals.It is believed that the nativedefect of InP crystals can be effectively reduced by the introduction of Sb isoelectronic impurity.
基金
国家自然科学基金
关键词
INP
SB
电子杂质
缺陷
正电子湮没
Positron annihilation
Native defect
isoelectronic impurity
