摘要
将所设计的新结构半导体激光器──阶梯衬底内条形激光器推进到可见光波段(0.75—0.80μm)。器件直流阈值最低26mA,光功率线性15—20mW,2—4 I_(th)基模工作,4mW工作寿命已超过5000小时。本文还讨论分析了该结构器件可靠性改善的原因。
A kind of new structure visible semiconductor laser, terraced substrate inner stripe (TSIS)laser, is developed.The devices is sensitive to the wavelength ranging from 0.75 to 0.80μm, thelowest threshold current is 26mA, linear laser output power is 15-20mW and the fundamentalmode behavior cart be performed at 2-4 Ith, the CW operation time is longer than 5000 hours.The reliability of the lasers is also discussed.
关键词
半导体激光器
可见光
阶梯衬底
Visible
Terraced substrate
lnner stripe
Semiconductor laser
