摘要
本文研究了在磁场作用下a—Si:H薄膜的红外光谱的变化,发现了2000cm^(-1)硅氢振动模向2100cm^(-1)硅氢振动模的直接转变,并且在这种变化中键合氢的含量不变。提出了Si—H……Si弱耦合模型。
The magnetic-field-induced IR spectrum change in GD a-Si:H is reported. The IR spectraof a-Si:H film were measured in alternating magnetic field.We found a shift from 2000cm^(-1) to2190cm^(-1)depend upon the increase of the magnetic field strength. The threshold value ofthe magnetic field strength of the shift is 130GS, and the maxmium value corresponding tothe maxmium shift 800GS. The magnetic-field-induced state is a non-steady-state with veryshort relaxation time, in which IR spectra changes is not dependent on the bonded hydrogencontent. A simple model, Si-H.…Si weak couple, is suggested.
