摘要
本文采用两种溅射系统:射频磁控溅射系统和S枪溅射系统淀积了氮化钨薄膜。X射线衍射方法(XRD)、俄歇电子谱(AES)和电学测量等方法用来分析了氮化钨薄膜的组分、晶体结构和薄膜的电阻率。并研究了氮在氮、氩混合气体中的不同流量比对氮化钨薄膜特性的影响。用卢瑟福背散射(RBS)方法对比研究了纯钨薄膜和氮化钨薄膜在Al/W/Si和Al/WN_x/Si两种金属化系统中的扩散势垒特性。分析结果表明,Al/W/Si金属化系统经500℃、30分钟热退火后,出现了明显的互扩散现象;而Al/WN_x/Si金属化系统在550℃、30分钟热退火后,没有发现互扩散的迹象,说明氮化钨在硅集成电路中是一种有效的扩散势垒材料。
The WN_x films were deposited by two ypes of sputtering system: (1) rf magnetron sputteringsystem,and (2) S-gun sputtering system.The composition, crystalline structure and electricalresistivity of WN_x film are investigated by Auger electron spectroscopy (AES), X-raydiffraction analysis and electrical measurements.The influence of N_2: Ar gas flow ratio onthe preproties of WN_x film is studied.The diffusion barrier characteristics of pure W andWN_x films in both Al/W/Si and Al/WN_x/Si contact metallization systems are researched byRutherford baekscattering spectroscopy.The results show that interdiffusion in the Al/W/Sisystem is evident after annealing, at 500℃ for 30 min and the interdiffusion and reaction donot occur for Al/WN_x/Si contact system after annealing at temperature up to 550℃ for 30min.Therefore, WN_x is an effective diffusion barrier material.
基金
国家目然科学基金
