摘要
本文观察和测量了Si_3N_4和SiO_xN_y薄膜在俄歇电子谱(AES)分析中的电子束和离子束效应。结果表明在高束流密度电子束辐照下没有观察到任何损伤特征峰。延长辐照时间仅导致氧的解吸和Si、N讯号增加,最后达到一个稳定态。Si_3N_4和SiO_xN_y对离子辐照很容易造成损伤。但在高束流密度的电子束辐照下离子损伤的表面可以恢复。恢复程度与电子束流密度、束能、辐照时间和样品制备工艺有关。最后,本文对离子辐照损伤和恢复的机理进行了讨论。
Electron and Ion Beam irradiation effects in AES analysis of silicon nitride and oxynitridehave been investigated. The results show that no any damaged feature peaks are observedeven under a focused electron beam irradiation. A prolonged irradiation only results in.increaseof Si LVV and N KLL PPH values and decrease of oxygen contamination until a steady stateis reached. However, the surface of silicon nitride and oxynitride thin films are very susceptibleto damage by energetic ion impact.The damaged surface can be recovered by irradiationwith an electron beam in the UHV system. The degree of recovery not only has a closerelation with the current density, beem energy, irradiation time but also with the preparationof the films.The mechanism of the damage and recovery is discussed.
