摘要
本文采用雪崩热电子注入技术研究了快速热氯化SiO_2膜和氮化后再氧化SiO_2膜的体电子陷阱和界面态特性。揭示出电子陷阱的起源和放电机理;观察并解释了界面态密度随氮化时间以及平带电压漂移随注入时间的变化关系;提出降低体电子陷阱密度和界面态密度的有效途径。
This paper has studied the characteristics of bulk electron trap and interface state of rapidthermal nitrided SiO_2 film and reoxidized nitrided SiO_2 film with the technique of avalanchehotelectron injection.The origin and discharge mechanism of electron trap are revealed.Thechanges of interface state density with nitridation ime and flatband voltage shift with injectiontime are observed and explained.An effective way of decreasing bulk electron trapdensity and interface state density is put forward.
基金
中国科学院科学基金
Croucher资金
香港大学关键性研究拨款
关键词
SIO2膜
热氮化
电子陷阱
电子注入
Electron trap
Interface states
Avalanche
Discharge
Hot-electron injection
