Er^+注入单晶硅中非晶层晶化过程的TEM研究

TEM Study of Crystallization of Amorphous Layer in Er^+ Implanted Si

剖面透射电镜的变温观察及高分辨电子显微镜(HREM)象表明,Er^+注入(注入能量350kev,注入剂量1×10^(15)cm^(-2))硅单晶后,在表面可形成一连续非晶层。热退火过程中,非晶层可以从非晶/单晶界面处进行固相外延和在内部成核两种方式进行再结晶以至形成多晶层。再结晶的晶粒中存在大量微孪晶和堆垛层错。

Variable temperature observations by cross-section transmission electron microscope andhigh resolution electron microscope images show that an amorphous layer is formed after anEr^+(150keV, 1×10^(15)cm^(-2)implanting into crystalline silicon.During thermal annealing, theamorphous layer is recrystallized into polysilicon layer through solid-phase epitaxial regrowthfrom the amorphous-crystalline interface and through the nucleation in the amorphous layer.There are a lot of twin boundaries and stacking faults in the recrystallized grains.