摘要
本文用俄歇能谱、卢瑟福背散射、电流-电压和电容-电压等方法研究了射频磁控反应溅射制备的WN_x/n-GaAs肖特基势垒特性。结果表明,经800℃快速热退火后,WN_x/n-GaAs势垒具有良好的整流特性和高温稳定性,其势垒高度为0.79ev,理想因子为1.19。在自对准GaAs MESFET工艺中,WN_x是一种好的栅材料。
The characterization of WN_x/n-GaAs Schottky barriers prepared by magnetron sputteringis investigated using Auger electron spectrum, Rutherford backscattering spetra, current-voltageand capacitance-voltage measurements.The results show that WN_x/n-GaAs Schottky contactannealed at 800℃ is thermally stable and maintain excellent rectifying characteristics. Thecorresponding barrier height of 0.79eV and ideality factor of 1.19 are obtained. Our studysuggests that WN_x is a good material for self-aligned GaAs MESFET process.
基金
国家自然科学基金
关键词
氮化钨
砷化镓
肖特基势垒
溅射
Reactive sputtering
WN_x
GaAs
Schottky barrier
Self-aligned GaAsMESFETs
