摘要
本文介绍了快速1.3μm InGaAsP/InP台面边发光二极管(ELED)的研制过程,通过有源区重掺Zn杂质和引进台面结构,提高了器件的调制频率,使-3dB调制带宽达500MHz,70mA电流下输出功率为130μW。
High-speed 1.3μm InGaAsP/InP mesa-structure edge-emitting LEDs have been fabricatedby liquid-phase epitaxy.The modulation bandwidth has been increased by heavy Zn doping inthe active region and by introducing a mesa-structure.A -3dB modulation bandwidth of500 MHz and light output power of 130μW at 70 mA have been obtained.
