摘要
本文系统研究了不对称GaAs/AlAs双势垒共振隧穿结构中非共振磁隧穿谱在正反偏压方向上的特征差异,并且用渡越电子沿正反方向隧穿通过双势垒结构时在势阱中停留时间的不同合理解释了实验结果。
The characteristic differences in nonresonant magneto-tunneling processes measured from anumber of asymmetric GaAs/AlAs double-barrier resonant-tunneling structures in two oppositebiases have systemmatically been studied, and ascribed to the different dwell times of traversingelectrons in the well as they tunnel along two opposite directions.
基金
国家自然科学基金
关键词
非共振
磁隧穿
势垒结构
GAAS/ALAS
Resonant Tunneling
Nonresonant Magneto-Tunneling
Magneto-Tunneling spectra
Phonon scattering
Dwell time
